High-intensity implantation of titanium into silicon using repetitively pulsed high-density beams

Bibliographic Details
Parent link:	European Physical Journal Plus.— .— New York: Springer Science+Business Media LLC. Vol. 140.— 2025.— Article number 1031, 9 p.
Other Authors:	Ivanova A. I. Anna Ivanovna, Korneva O. S. Olga Sergeevna, Bozhko I. A. Irina Aleksandrovna, Dektyarev S. V. Sergey Valentinovich, Gurulev A. V. Aleksandr Valerjevich
Summary:	Title screen The article presents the results of studies of repetitively pulsed implantation of silicon by high-power density titanium ion beams in the mode of simultaneous energy impact of the beam and rotation of the irradiated target. The article demonstrates the possibility of forming deeply modified surface layers with a thickness of up to 1.5 μm when the sample irradiation dose increases from 3.5×1019 to 1.2×1020 ion/cm2. The elemental composition of the samples was analyzed using the Rutherford backscattering (RBS) method. The results of the phase composition of the studied samples are presented Текстовый файл AM_Agreement
Published:	2025
Subjects:	электронный ресурс труды учёных ТПУ
Online Access:	https://doi.org/10.1140/epjp/s13360-025-06977-8
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=684096

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