Investigation of the Features of High-Intensity Implantation of Nitrogen Ions into Titanium; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 17, s. 1
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— .— New York: Springer Science+Business Media LLC Vol. 17, s. 1.— 2023.— P. S162–S165 |
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| Summary: | Title screen The article presents the results of studies of the features and regularities of high-intensity nitrogen ion implantation into titanium using repetitively-pulsed beams with high average power densities. It is shown that the method of low-energy high-intensity nitrogen ion implantation at current densities of 180, 140, 60, and 10 mA/cm2 makes it possible to obtain wide ion-doped layers in titanium. The regularities of changes in both thickness and elemental composition of ion-doped layers depending on the ion current density have been established. It has been established that a wide diffusion layer is observed at ion current densities from 60 to 180 mA/cm2. Nitrogen concentration in the diffusion layer increases with an increase in the ion current density. The article presents the transmission electron microscopy data showing that the modified layers at a depth of 10 μm consist of α-Ti, in the volume of which nanosized particles of δ-TiN with average size of 15.4 nm crystallize Текстовый файл AM_Agreement |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://doi.org/10.1134/S1027451023070455 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=675349 |
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| 200 | 1 | |a Investigation of the Features of High-Intensity Implantation of Nitrogen Ions into Titanium |f A. I. Ryabchikov, O. S. Korneva, A. I. Ivanova [et al.] | |
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| 300 | |a Title screen | ||
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| 330 | |a The article presents the results of studies of the features and regularities of high-intensity nitrogen ion implantation into titanium using repetitively-pulsed beams with high average power densities. It is shown that the method of low-energy high-intensity nitrogen ion implantation at current densities of 180, 140, 60, and 10 mA/cm2 makes it possible to obtain wide ion-doped layers in titanium. The regularities of changes in both thickness and elemental composition of ion-doped layers depending on the ion current density have been established. It has been established that a wide diffusion layer is observed at ion current densities from 60 to 180 mA/cm2. Nitrogen concentration in the diffusion layer increases with an increase in the ion current density. The article presents the transmission electron microscopy data showing that the modified layers at a depth of 10 μm consist of α-Ti, in the volume of which nanosized particles of δ-TiN with average size of 15.4 nm crystallize | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques |c New York |n Springer Science+Business Media LLC | |
| 463 | 1 | |t Vol. 17, s. 1 |v P. S162–S165 |d 2023 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a ion beam | |
| 610 | 1 | |a dopants | |
| 610 | 1 | |a implantation | |
| 610 | 1 | |a high intensity | |
| 610 | 1 | |a repetitively pulsed | |
| 610 | 1 | |a surface modification | |
| 610 | 1 | |a titanium | |
| 610 | 1 | |a nitrogen ions | |
| 610 | 1 | |a radiation enhanced diffusion | |
| 610 | 1 | |a wide ion-doped layers | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |9 15150 | |
| 701 | 1 | |a Korneva |b O. S. |c physicist |c engineer of Tomsk Polytechnic University |f 1988- |g Olga Sergeevna |9 20156 | |
| 701 | 1 | |a Ivanova |b A. I. |c physicist |c Associate Scientist of Tomsk Polytechnic University |f 1987- |g Anna Ivanovna |9 20002 | |
| 701 | 1 | |a Varlachev |b V. A. |c physicist, specialist in the field of nuclear physics |c Professor-consultant of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1948- |g Valery Aleksandrovich |y Tomsk |9 17353 | |
| 701 | 1 | |a Chernyshev |b A. A. | |
| 712 | 0 | 2 | |a National Research Tomsk Polytechnic University |c (2009- ) |9 27197 |4 570 |
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