Synthesis of silicon carbide using an AC atmospheric-pressure arc reactor; Journal of Alloys and Compounds; Vol. 1003
| Parent link: | Journal of Alloys and Compounds.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 1003.— 2024.— Article number 175589, 7 p. |
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| Співавтор: | |
| Інші автори: | , , , , |
| Резюме: | The paper presents the results of the experimental development of a technique for producing silicon carbide from a carbon black and silicon mixture heated to the temperature required to induce carbide formation by AC arc discharge. For the first time, the technique for producing silicon carbide using the AC arc discharge method in an oxygen-containing (air) environment is demonstrated. The study revealed the dependence of the phase composition of the product on the AC arc discharge energy, which depended on two variables: the operating cycle duration and the discharge current strength. As a result, the parameters to produce silicon carbide with a purity exceeding 95 % (as evidenced by X-ray diffraction analysis) were determined. The size distribution of silicon carbide particles was found to vary from tens of nanometers to tens of micrometers. The morphology of the product particles is characteristic of silicon carbide single crystals. Transmission electron microscopy revealed several types of nano-sized silicon carbide objects in the synthesis product, including nanorods and nanowires. The specific surface area of the resulting powder attains ∼ 9 m2/g. Текстовый файл |
| Мова: | Англійська |
| Опубліковано: |
2024
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| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1016/j.jallcom.2024.175589 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=674717 |
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| 200 | 1 | |a Synthesis of silicon carbide using an AC atmospheric-pressure arc reactor |f A. A. Lavrenchuk, M. Yu. Speranskiy, A. Ya. Pak [et al.] | |
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| 330 | |a The paper presents the results of the experimental development of a technique for producing silicon carbide from a carbon black and silicon mixture heated to the temperature required to induce carbide formation by AC arc discharge. For the first time, the technique for producing silicon carbide using the AC arc discharge method in an oxygen-containing (air) environment is demonstrated. The study revealed the dependence of the phase composition of the product on the AC arc discharge energy, which depended on two variables: the operating cycle duration and the discharge current strength. As a result, the parameters to produce silicon carbide with a purity exceeding 95 % (as evidenced by X-ray diffraction analysis) were determined. The size distribution of silicon carbide particles was found to vary from tens of nanometers to tens of micrometers. The morphology of the product particles is characteristic of silicon carbide single crystals. Transmission electron microscopy revealed several types of nano-sized silicon carbide objects in the synthesis product, including nanorods and nanowires. The specific surface area of the resulting powder attains ∼ 9 m2/g. | ||
| 336 | |a Текстовый файл | ||
| 461 | 1 | |t Journal of Alloys and Compounds |c Amsterdam |n Elsevier Science Publishing Company Inc. | |
| 463 | 1 | |t Vol. 1003 |v Article number 175589, 7 p. |d 2024 | |
| 610 | 1 | |a Silicon carbide | |
| 610 | 1 | |a AC arc discharge | |
| 610 | 1 | |a Vacuum-free electric arc method | |
| 610 | 1 | |a Phase composition | |
| 610 | 1 | |a Oxidation | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a электронный ресурс | |
| 701 | 1 | |a Lavrenchuk |b A. A. |g Anton Anatoljevich | |
| 701 | 1 | |a Speransky |b M. Yu. |g Maksim Yurjevich | |
| 701 | 1 | |a Pak |b A. Ya. |c specialist in the field of electrical engineering |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1986- |g Aleksandr Yakovlevich |9 17660 | |
| 701 | 1 | |a Korchagina |b A. P. |c Senior laboratory assistant at Tomsk Polytechnic University |f 2000- |g Anastasiya Pavlovna |9 22775 | |
| 701 | 1 | |a Vlasov |b A, V. |c specialist in the field of informatics and computer technology |c Laboratory assistant, Associate Scientist of Tomsk Polytechnic University |f 1997- |g Aleksey Vladimirovich |y Tomsk |9 88654 | |
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