Synthesis of silicon carbide using an AC atmospheric-pressure arc reactor
| Parent link: | Journal of Alloys and Compounds.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 1003.— 2024.— Article number 175589, 7 p. |
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| その他の著者: | , , , , |
| 要約: | The paper presents the results of the experimental development of a technique for producing silicon carbide from a carbon black and silicon mixture heated to the temperature required to induce carbide formation by AC arc discharge. For the first time, the technique for producing silicon carbide using the AC arc discharge method in an oxygen-containing (air) environment is demonstrated. The study revealed the dependence of the phase composition of the product on the AC arc discharge energy, which depended on two variables: the operating cycle duration and the discharge current strength. As a result, the parameters to produce silicon carbide with a purity exceeding 95 % (as evidenced by X-ray diffraction analysis) were determined. The size distribution of silicon carbide particles was found to vary from tens of nanometers to tens of micrometers. The morphology of the product particles is characteristic of silicon carbide single crystals. Transmission electron microscopy revealed several types of nano-sized silicon carbide objects in the synthesis product, including nanorods and nanowires. The specific surface area of the resulting powder attains ∼ 9 m2/g. Текстовый файл |
| 言語: | 英語 |
| 出版事項: |
2024
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| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1016/j.jallcom.2024.175589 |
| フォーマット: | 電子媒体 図書の章 |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=674717 |