On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun

On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun

Бібліографічні деталі
Parent link:	Journal of Engineering Physics and Thermophysics=Инженерно-физический журнал.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 97, iss. 2.— 2024.— P. 463-470
Інші автори:	Gerasimov R. D. Roman Dmitrievich, Shekhovtsov V. V. Valentin Valerjevich, Vasiljeva (Vassilyeva) Yu. Z. Yuliya Zakharovna, Pak A. Ya. Aleksandr Yakovlevich, Mamontov G. Ya. Gennady Yakovlevich, Volokitin O. G. Oleg Gennadjevich
Резюме:	Title screen The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma flow with a bulk temperature of 5600 K. Regimes have been identified for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass) Текстовый файл AM_Agreement
Мова:	Англійська
Опубліковано:	2024
Предмети:	электронный ресурс труды учёных ТПУ synthesis plasmatron silicon carbide carbon thermal plasma
Онлайн доступ:	https://doi.org/10.1007/s10891-024-02913-2 Статья на русском языке
Формат:	Електронний ресурс Частина з книги
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673475

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