On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun

On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun

Détails bibliographiques
Parent link:	Journal of Engineering Physics and Thermophysics=Инженерно-физический журнал.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 97, iss. 2.— 2024.— P. 463-470
Autres auteurs:	Gerasimov R. D. Roman Dmitrievich, Shekhovtsov V. V. Valentin Valerjevich, Vasiljeva (Vassilyeva) Yu. Z. Yuliya Zakharovna, Pak A. Ya. Aleksandr Yakovlevich, Mamontov G. Ya. Gennady Yakovlevich, Volokitin O. G. Oleg Gennadjevich
Résumé:	Title screen The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma flow with a bulk temperature of 5600 K. Regimes have been identified for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass) Текстовый файл AM_Agreement
Langue:	anglais
Publié:	2024
Sujets:	электронный ресурс труды учёных ТПУ synthesis plasmatron silicon carbide carbon thermal plasma
Accès en ligne:	https://doi.org/10.1007/s10891-024-02913-2 Статья на русском языке
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673475

Internet

https://doi.org/10.1007/s10891-024-02913-2
Статья на русском языке