On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun; Journal of Engineering Physics and Thermophysics; Vol. 97, iss. 2

On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun; Journal of Engineering Physics and Thermophysics; Vol. 97, iss. 2

গ্রন্থ-পঞ্জীর বিবরন
Parent link:	Journal of Engineering Physics and Thermophysics=Инженерно-физический журнал.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 97, iss. 2.— 2024.— P. 463-470
অন্যান্য লেখক:	Gerasimov R. D. Roman Dmitrievich, Shekhovtsov V. V. Valentin Valerjevich, Vasiljeva (Vassilyeva) Yu. Z. Yuliya Zakharovna, Pak A. Ya. Aleksandr Yakovlevich, Mamontov G. Ya. Gennady Yakovlevich, Volokitin O. G. Oleg Gennadjevich
সংক্ষিপ্ত:	Title screen The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma flow with a bulk temperature of 5600 K. Regimes have been identified for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass) Текстовый файл AM_Agreement
ভাষা:	ইংরেজি
প্রকাশিত:	2024
বিষয়গুলি:	электронный ресурс труды учёных ТПУ synthesis plasmatron silicon carbide carbon thermal plasma
অনলাইন ব্যবহার করুন:	https://doi.org/10.1007/s10891-024-02913-2 Статья на русском языке
বিন্যাস:	বৈদ্যুতিক গ্রন্থের অধ্যায়
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673475

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