On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun; Journal of Engineering Physics and Thermophysics; Vol. 97, iss. 2
| Parent link: | Journal of Engineering Physics and Thermophysics=Инженерно-физический журнал.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 97, iss. 2.— 2024.— P. 463-470 |
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| Otros Autores: | , , , , , |
| Sumario: | Title screen The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma flow with a bulk temperature of 5600 K. Regimes have been identified for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass) Текстовый файл AM_Agreement |
| Lenguaje: | inglés |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | https://doi.org/10.1007/s10891-024-02913-2 Статья на русском языке |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673475 |
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| 200 | 1 | |a On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun |d О возможности синтеза карбида кремния с использованием плазмотрона косвенного действия |f R. D. Gerasimov, V. V. Shekhovtsov, Yu. Z. Vasil’eva [et al.] |z rus | |
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| 330 | |a The paper presents the results of experimental and theoretical investigations into the synthesis of silicon carbide using the energy of thermal plasma. The experimental investigations were conducted on a stand with 4 kW of power making it possible to have a thermal plasma flow with a bulk temperature of 5600 K. Regimes have been identified for the synthesis of silicon carbide and concentration of composite charge mixture components determining its yield. On the basis of processing experimental data, key characteristics have been calculated for the technological process of silicon carbide synthesis (time and load mass) | ||
| 336 | |a Текстовый файл | ||
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| 461 | 1 | |t Journal of Engineering Physics and Thermophysics |l Инженерно-физический журнал |c Amsterdam |n Elsevier Science Publishing Company Inc. | |
| 463 | 1 | |t Vol. 97, iss. 2 |v P. 463-470 |d 2024 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a synthesis | |
| 610 | 1 | |a plasmatron | |
| 610 | 1 | |a silicon carbide | |
| 610 | 1 | |a carbon | |
| 610 | 1 | |a thermal plasma | |
| 701 | 1 | |a Gerasimov |b R. D. |c specialist in the field of automatic control |c Associate Scientist of Tomsk Polytechnic University |f 1997- |g Roman Dmitrievich |9 23042 | |
| 701 | 1 | |a Shekhovtsov |b V. V. |g Valentin Valerjevich | |
| 701 | 1 | |a Vasiljeva (Vassilyeva) |b Yu. Z. |c specialist in the field of electric power engineering |c Researcher, Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1995- |g Yuliya Zakharovna |9 22376 | |
| 701 | 1 | |a Pak |b A. Ya. |c specialist in the field of electrical engineering |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1986- |g Aleksandr Yakovlevich |9 17660 | |
| 701 | 1 | |a Mamontov |b G. Ya. |c mathematician |c Professor of Tomsk Polytechnic University, doctor of physical and mathematical Sciences |f 1945-2023 |g Gennady Yakovlevich |9 18594 | |
| 701 | 1 | |a Volokitin |b O. G. |g Oleg Gennadjevich | |
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