Адсорбция атома кремния на поверхностях (001) и (110) соединений TiN, TaN, AlN: расчеты из первых принципов
| Parent link: | Курзина, И. А. (химик ; 1972-). Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XX Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 25-28 апреля 2023 г..— .— Томск: Изд-во ТПУ, 2023 Т. 1 : Физика.— 2023.— С. 282-284 |
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| Summary: | Заглавие с экрана We present the results of ab initio study of silicon atom adsorption on the (001) and (110) surfaces of TiN, TaN, AlN compounds with NaCl structure. All possible symmetric nonequivalent positions of the silicon atom on the surfaces under study are considered, and the binding energy for the silicon atom in these positions is calculated. The most energetically favorable positions for adsorption on the (001) and (110) surfaces under consideration have been established Текстовый файл |
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2023
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| Online Access: | http://earchive.tpu.ru/handle/11683/80818 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673428 |
| Summary: | Заглавие с экрана We present the results of ab initio study of silicon atom adsorption on the (001) and (110) surfaces of TiN, TaN, AlN compounds with NaCl structure. All possible symmetric nonequivalent positions of the silicon atom on the surfaces under study are considered, and the binding energy for the silicon atom in these positions is calculated. The most energetically favorable positions for adsorption on the (001) and (110) surfaces under consideration have been established Текстовый файл |
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