Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
| Parent link: | Semiconductor Science and Technology Vol. 37, iss. 5.— 2022.— [9 p.] |
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| সংস্থা লেখক: | |
| অন্যান্য লেখক: | , , , |
| সংক্ষিপ্ত: | Title screen The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics RSH, RSK, ? and geometrical parameter LT on the LTLM test line width Wk. The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2022
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://doi.org/10.1088/1361-6641/ac557e |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668443 |
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| 200 | 1 | |a Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures |f N. A. Torkhov, A. V. Gradoboev, K. N. Orlova, A. S. Toropov | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 37 tit.] | ||
| 330 | |a The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics RSH, RSK, ? and geometrical parameter LT on the LTLM test line width Wk. The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Semiconductor Science and Technology | ||
| 463 | |t Vol. 37, iss. 5 |v [9 p.] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Torkhov |b N. A. |g Nikolay Aleksandrovich | |
| 701 | 1 | |a Gradoboev |b A. V. |c physicist |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences |f 1952- |g Aleksandr Vasilyevich |3 (RuTPU)RU\TPU\pers\34242 |9 17773 | |
| 701 | 1 | |a Orlova |b K. N. |c physicist |c Associate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of technical sciences |f 1985- |g Kseniya Nikolaevna |3 (RuTPU)RU\TPU\pers\33587 |9 17245 | |
| 701 | 1 | |a Toropov |b A. S. |g Aleksandr Sergeevich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Отделение экспериментальной физики |3 (RuTPU)RU\TPU\col\23549 |
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