Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

Bibliographic Details
Parent link:Semiconductor Science and Technology
Vol. 37, iss. 5.— 2022.— [9 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение экспериментальной физики
Other Authors: Torkhov N. A. Nikolay Aleksandrovich, Gradoboev A. V. Aleksandr Vasilyevich, Orlova K. N. Kseniya Nikolaevna, Toropov A. S. Aleksandr Sergeevich
Summary:Title screen
The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics RSH, RSK, ? and geometrical parameter LT on the LTLM test line width Wk. The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2022
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:https://doi.org/10.1088/1361-6641/ac557e
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668443

Internet

https://doi.org/10.1088/1361-6641/ac557e

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