Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
| Parent link: | Semiconductor Science and Technology Vol. 37, iss. 5.— 2022.— [9 p.] |
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| Autor corporatiu: | |
| Altres autors: | , , , |
| Sumari: | Title screen The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics RSH, RSK, ? and geometrical parameter LT on the LTLM test line width Wk. The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2022
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| Matèries: | |
| Accés en línia: | https://doi.org/10.1088/1361-6641/ac557e |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668443 |
| Sumari: | Title screen The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics RSH, RSK, ? and geometrical parameter LT on the LTLM test line width Wk. The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1088/1361-6641/ac557e |