Electrical Properties of Aluminum Oxide Ceramics Film on a Metal

Sonraí bibleagrafaíochta
Parent link:Inorganic Materials: Applied Research
Vol. 12, iss. 5.— 2021.— [P. 1276-1280]
Údar corparáideach: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Rannpháirtithe: Bakeev I. Yu. Iljya Yurjevich, Burachevsky Yu. A. Yuriy Alexandrovich, Dvilis E. S. Edgar Sergeevich, Zolotukhin D. B. Denis Borisovich, Yushkov Y. G. Yuri Georgievich
Achoimre:Title screen
The work is devoted to the study of electrical properties (temperature dependences of conductivity, relative dielectric constant, dielectric loss tangent for various frequencies) of an aluminum oxide ceramic film deposited on a metal substrate. The film was created by an original method of electron beam evaporation of a nonconducting target consisting of a compressed alumina powder using a plasma electron source, which is able to reliably operate in the fore-vacuum pressure range (5–100 Pa). Such increased working gas pressure ensures the generation of a dense beam plasma near the target, which neutralizes the charging of a nonconducting target and thereby provides its effective melting and electron beam evaporation.
Режим доступа: по договору с организацией-держателем ресурса
Foilsithe / Cruthaithe: 2021
Ábhair:
Rochtain ar líne:https://doi.org/10.1134/S207511332105004X
Formáid: Leictreonach Caibidil leabhair
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668266