Radio frequency bias enhanced nucleation of CVD diamond; Materials Letters; Vol. 324

Radio frequency bias enhanced nucleation of CVD diamond; Materials Letters; Vol. 324

Chi tiết về thư mục
Parent link:	Materials Letters Vol. 324.— 2022.— [132670, 4 p.]
Nhiều tác giả của công ty:	Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Tác giả khác:	Linnik S. A. Stepan Andreevich, Gaydaychuk A. V. Alexander Valerievich, Mitulinsky A. S. Aleksandr Sergeevich, Zenkin S. P. Sergey Petrovich
Tóm tắt:	Title screen In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates. Режим доступа: по договору с организацией-держателем ресурса
Ngôn ngữ:	Tiếng Anh
Được phát hành:	2022
Những chủ đề:	электронный ресурс труды учёных ТПУ CVD diamond bias-enhanced nucleation ion bombardment radio frequency bias
Truy cập trực tuyến:	https://doi.org/10.1016/j.matlet.2022.132670
Định dạng:	Điện tử Chương của sách
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668170

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