Radio frequency bias enhanced nucleation of CVD diamond

Radio frequency bias enhanced nucleation of CVD diamond

Bibliographic Details
Parent link:	Materials Letters Vol. 324.— 2022.— [132670, 4 p.]
Corporate Authors:	Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Other Authors:	Linnik S. A. Stepan Andreevich, Gaydaychuk A. V. Alexander Valerievich, Mitulinsky A. S. Aleksandr Sergeevich, Zenkin S. P. Sergey Petrovich
Summary:	Title screen In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates. Режим доступа: по договору с организацией-держателем ресурса
Published:	2022
Subjects:	электронный ресурс труды учёных ТПУ CVD diamond bias-enhanced nucleation ion bombardment radio frequency bias
Online Access:	https://doi.org/10.1016/j.matlet.2022.132670
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668170

Internet

https://doi.org/10.1016/j.matlet.2022.132670