Radio frequency bias enhanced nucleation of CVD diamond

Détails bibliographiques
Parent link:	Materials Letters Vol. 324.— 2022.— [132670, 4 p.]
Autres auteurs:	Linnik S. A. Stepan Andreevich, Gaydaychuk A. V. Alexander Valerievich, Mitulinsky A. S. Aleksandr Sergeevich, Zenkin S. P. Sergey Petrovich
Résumé:	Title screen In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates. Режим доступа: по договору с организацией-держателем ресурса
Langue:	anglais
Publié:	2022
Sujets:	электронный ресурс труды учёных ТПУ CVD diamond bias-enhanced nucleation ion bombardment radio frequency bias
Accès en ligne:	https://doi.org/10.1016/j.matlet.2022.132670
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668170

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