Radio frequency bias enhanced nucleation of CVD diamond
| Parent link: | Materials Letters Vol. 324.— 2022.— [132670, 4 p.] |
|---|---|
| Kurumsal yazarlar: | , |
| Diğer Yazarlar: | , , , |
| Özet: | Title screen In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates. Режим доступа: по договору с организацией-держателем ресурса |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2022
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| Konular: | |
| Online Erişim: | https://doi.org/10.1016/j.matlet.2022.132670 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668170 |
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| 200 | 1 | |a Radio frequency bias enhanced nucleation of CVD diamond |f S. A. Linnik, A. V. Gaydaychuk, A. S. Mitulinsky, S. P. Zenkin | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 23 tit.] | ||
| 330 | |a In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Materials Letters | ||
| 463 | |t Vol. 324 |v [132670, 4 p.] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a CVD diamond | |
| 610 | 1 | |a bias-enhanced nucleation | |
| 610 | 1 | |a ion bombardment | |
| 610 | 1 | |a radio frequency bias | |
| 701 | 1 | |a Linnik |b S. A. |c physicist |c Engineer-Researcher of Tomsk Polytechnic University |f 1985- |g Stepan Andreevich |3 (RuTPU)RU\TPU\pers\32877 |9 16725 | |
| 701 | 1 | |a Gaydaychuk |b A. V. |c physicist |c Postgraduate, Engineer - Researcher of Tomsk Polytechnic University |f 1984- |g Alexander Valerievich |3 (RuTPU)RU\TPU\pers\32876 |9 16724 | |
| 701 | 1 | |a Mitulinsky |b A. S. |c electric power specialist |c technician of Tomsk Polytechnic University |f 1998- |g Aleksandr Sergeevich |3 (RuTPU)RU\TPU\pers\47113 | |
| 701 | 1 | |a Zenkin |b S. P. |c physicist |c Researcher of Tomsk Polytechnic University |f 1988- |g Sergey Petrovich |3 (RuTPU)RU\TPU\pers\41880 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" |3 (RuTPU)RU\TPU\col\23502 |
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