Radio frequency bias enhanced nucleation of CVD diamond; Materials Letters; Vol. 324

Radio frequency bias enhanced nucleation of CVD diamond; Materials Letters; Vol. 324

Detaylı Bibliyografya
Parent link:Materials Letters
Vol. 324.— 2022.— [132670, 4 p.]
Kurumsal yazarlar: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Diğer Yazarlar: Linnik S. A. Stepan Andreevich, Gaydaychuk A. V. Alexander Valerievich, Mitulinsky A. S. Aleksandr Sergeevich, Zenkin S. P. Sergey Petrovich
Özet:Title screen
In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates.
Режим доступа: по договору с организацией-держателем ресурса
Dil:İngilizce
Baskı/Yayın Bilgisi: 2022
Konular:
электронный ресурс
труды учёных ТПУ
CVD diamond
bias-enhanced nucleation
ion bombardment
radio frequency bias
Online Erişim:https://doi.org/10.1016/j.matlet.2022.132670
Materyal Türü: Elektronik Kitap Bölümü
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668170
Diğer Bilgiler
Özet:Title screen
In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.matlet.2022.132670

Benzer Materyaller