Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth; Materials Letters; Vol. 321
| Parent link: | Materials Letters Vol. 321.— 2022.— [132441, 4 p.] |
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| Corporate Authors: | , |
| מחברים אחרים: | , , , |
| סיכום: | Title screen Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2022
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1016/j.matlet.2022.132441 |
| פורמט: | MixedMaterials אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668051 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 668051 | ||
| 005 | 20250325163446.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\39275 | ||
| 090 | |a 668051 | ||
| 100 | |a 20220602d2022 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth |f S. P. Zenkin, A. V. Gaydaychuk, A. S. Mitulinsky, S. A. Linnik | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 19 tit.] | ||
| 330 | |a Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Materials Letters | ||
| 463 | |t Vol. 321 |v [132441, 4 p.] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a diamond heteroepitaxy | |
| 610 | 1 | |a Ir-Cu thin film | |
| 610 | 1 | |a CVD diamond | |
| 610 | 1 | |a гетероэпитаксия | |
| 610 | 1 | |a тонкие пленки | |
| 701 | 1 | |a Zenkin |b S. P. |c physicist |c Researcher of Tomsk Polytechnic University |f 1988- |g Sergey Petrovich |3 (RuTPU)RU\TPU\pers\41880 | |
| 701 | 1 | |a Gaydaychuk |b A. V. |c physicist |c Postgraduate, Engineer - Researcher of Tomsk Polytechnic University |f 1984- |g Alexander Valerievich |3 (RuTPU)RU\TPU\pers\32876 |9 16724 | |
| 701 | 1 | |a Mitulinsky |b A. S. |c electric power specialist |c technician of Tomsk Polytechnic University |f 1998- |g Aleksandr Sergeevich |3 (RuTPU)RU\TPU\pers\47113 | |
| 701 | 1 | |a Linnik |b S. A. |c physicist |c Engineer-Researcher of Tomsk Polytechnic University |f 1985- |g Stepan Andreevich |3 (RuTPU)RU\TPU\pers\32877 |9 16725 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" |3 (RuTPU)RU\TPU\col\23502 |
| 801 | 0 | |a RU |b 63413507 |c 20220602 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1016/j.matlet.2022.132441 | |
| 942 | |c CF | ||