Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth
| Parent link: | Materials Letters Vol. 321.— 2022.— [132441, 4 p.] |
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| 其他作者: | , , , |
| 总结: | Title screen Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production. Режим доступа: по договору с организацией-держателем ресурса |
| 语言: | 英语 |
| 出版: |
2022
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| 主题: | |
| 在线阅读: | https://doi.org/10.1016/j.matlet.2022.132441 |
| 格式: | 电子 本书章节 |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668051 |