Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth; Materials Letters; Vol. 321

Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth; Materials Letters; Vol. 321

Detalhes bibliográficos
Parent link:Materials Letters
Vol. 321.— 2022.— [132441, 4 p.]
Autores corporativos: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Outros Autores: Zenkin S. P. Sergey Petrovich, Gaydaychuk A. V. Alexander Valerievich, Mitulinsky A. S. Aleksandr Sergeevich, Linnik S. A. Stepan Andreevich
Resumo:Title screen
Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:inglês
Publicado em: 2022
Assuntos:
электронный ресурс
труды учёных ТПУ
diamond heteroepitaxy
Ir-Cu thin film
CVD diamond
гетероэпитаксия
тонкие пленки
Acesso em linha:https://doi.org/10.1016/j.matlet.2022.132441
Formato: Recurso Eletrônico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668051
Descrição
Resumo:Title screen
Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.matlet.2022.132441

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