Mathematical modeling of ion implantation process with account the vacancies generation; Известия вузов. Физика; Т. 57, № 10-3

Dades bibliogràfiques
Parent link:Известия вузов. Физика/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1958-
Т. 57, № 10-3.— 2014.— [С. 64-66]
Autor principal: Parfenova E. S. Elena Sergeevna
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра физики высоких технологий в машиностроении (ФВТМ)
Altres autors: Knyazeva A. G. Anna Georgievna
Sumari:Заглавие с экрана
The urgency of the discussed issue is caused by the need to theoretical research of process of ion implantation for advanced understanding and prediction of the result with great accuracy. The main aim of the study is to research of the initial stage of the ion implantation process with consider the mutual influence of two different scale processes: diffusion of impurities and stress waves, taking into account the transfer of the impurity for vacancies. Implicit finite difference scheme and the sweep method are used for the numerical realization of model. The isothermal dynamic model is suggested for research of the initial stage of the intermixing process in surface layer of material under surface treatment condition. The model takes into account the particle diffusion, the finite of mass flux relaxation time; the stress appearance due to composition change of surface layer, generation of vacancies and mass transfer phenomenon under stress gradient action. It is established that the interaction of mechanical waves and concentration leads to a distribution of concentration not corresponding to pure diffusion process, and account of impurity transport for vacancies leads to increase of the concentration wave amplitude.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2014
Matèries:
Accés en línia:https://elibrary.ru/item.asp?id=22980199
Format: xMaterials Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667418

MARC

LEADER 00000naa0a2200000 4500
001 667418
005 20250312155222.0
035 |a (RuTPU)RU\TPU\network\38623 
035 |a RU\TPU\network\22840 
090 |a 667418 
100 |a 20220322d2014 k||y0rusy50 ba 
101 0 |a eng 
102 |a RU 
135 |a drgn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Mathematical modeling of ion implantation process with account the vacancies generation  |f E. S. Parfenova, A. G. Knyazeva 
203 |a Text  |c electronic 
300 |a Заглавие с экрана 
320 |a [Библиогр.: 6 назв.] 
330 |a The urgency of the discussed issue is caused by the need to theoretical research of process of ion implantation for advanced understanding and prediction of the result with great accuracy. The main aim of the study is to research of the initial stage of the ion implantation process with consider the mutual influence of two different scale processes: diffusion of impurities and stress waves, taking into account the transfer of the impurity for vacancies. Implicit finite difference scheme and the sweep method are used for the numerical realization of model. The isothermal dynamic model is suggested for research of the initial stage of the intermixing process in surface layer of material under surface treatment condition. The model takes into account the particle diffusion, the finite of mass flux relaxation time; the stress appearance due to composition change of surface layer, generation of vacancies and mass transfer phenomenon under stress gradient action. It is established that the interaction of mechanical waves and concentration leads to a distribution of concentration not corresponding to pure diffusion process, and account of impurity transport for vacancies leads to increase of the concentration wave amplitude. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Известия вузов. Физика  |f Национальный исследовательский Томский государственный университет (ТГУ)  |d 1958- 
463 |t Т. 57, № 10-3  |v [С. 64-66]  |d 2014 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a concentration wave 
610 1 |a elastic wave 
610 1 |a coupling model 
610 1 |a surface treatment 
610 1 |a diffusion 
610 1 |a deformation 
610 1 |a упругие волны 
610 1 |a поверхностная обработка 
610 1 |a диффузия 
610 1 |a деформации 
610 1 |a математическое моделирование 
700 1 |a Parfenova  |b E. S.  |c Chemical Engineer  |c engineer of Tomsk Polytechnic University  |f 1989-  |g Elena Sergeevna  |3 (RuTPU)RU\TPU\pers\34500 
701 1 |a Knyazeva  |b A. G.  |c Russian physicist  |c Professor of Tomsk Polytechnic University, doctor of physico-mathematical Sciences  |f 1962-  |g Anna Georgievna  |3 (RuTPU)RU\TPU\pers\32712  |9 16597 
712 0 2 |a Национальный исследовательский Томский политехнический университет (ТПУ)  |b Институт физики высоких технологий (ИФВТ)  |b Кафедра физики высоких технологий в машиностроении (ФВТМ)  |3 (RuTPU)RU\TPU\col\18687 
801 2 |a RU  |b 63413507  |c 20220322  |g RCR 
856 4 |u https://elibrary.ru/item.asp?id=22980199 
942 |c CF