Mathematical modeling of ion implantation process with account the vacancies generation
| Parent link: | Известия вузов. Физика/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1958- Т. 57, № 10-3.— 2014.— [С. 64-66] |
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| Summary: | Заглавие с экрана The urgency of the discussed issue is caused by the need to theoretical research of process of ion implantation for advanced understanding and prediction of the result with great accuracy. The main aim of the study is to research of the initial stage of the ion implantation process with consider the mutual influence of two different scale processes: diffusion of impurities and stress waves, taking into account the transfer of the impurity for vacancies. Implicit finite difference scheme and the sweep method are used for the numerical realization of model. The isothermal dynamic model is suggested for research of the initial stage of the intermixing process in surface layer of material under surface treatment condition. The model takes into account the particle diffusion, the finite of mass flux relaxation time; the stress appearance due to composition change of surface layer, generation of vacancies and mass transfer phenomenon under stress gradient action. It is established that the interaction of mechanical waves and concentration leads to a distribution of concentration not corresponding to pure diffusion process, and account of impurity transport for vacancies leads to increase of the concentration wave amplitude. Режим доступа: по договору с организацией-держателем ресурса |
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2014
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| Online Access: | https://elibrary.ru/item.asp?id=22980199 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667418 |