Atomic layer deposition-developed two-dimensional alpha-MoO3 windows excellent hydrogen peroxide electrochemical sensing capabilities

Bibliographic Details
Parent link:Sensors and Actuators B: Chemical
Vol. 262.— 2018.— [P. 334-344]
Corporate Author: Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий
Other Authors: Wei Zihan, Hai Zhenyin, Akbari M. K. Mohammad Karbalaei, Qi D. Dongchen, Xing Kaijian, Zhao Qing, Verpoort F. V. K. Frensis Valter Kornelius, Hu Jie, Hyde Lachlan, Zhuiykov S. Sergey
Summary:Title screen
Two-dimensional (2D) alpha-MoO3 nano-films with thickness of 4.9 nm were fabricated via atomic layer deposition (ALD) technique for the first time on the wafer scale and were subsequently annealed at 200 °C. The developed MoO3 nano-films were composed of flat nanoparticles with the average size of about 35 nm and possessed layered orthorhombic phase (alpha-MoO3). The electrochemical sensor based on these 2D alpha-MoO3 nano-films exhibited great sensitivity of 168.72 muA mM-1 cm-2 to hydrogen peroxide (H2O2) and presented extremely wide linear detection range of 0.4 muM-57.6 mM with the lowest detection limit of 0.076 muM at the signal to noise ratio of 3. Furthermore, due to extremely thin nature of 2D alpha-MoO3 nano-films ultra-fast response/recovery time of 2.0 s was achieved under the wide linear H2O2 detection range. Additionally, the sensor based on 2D alpha-MoO3 nano-films was also demonstrated great long-term stability, excellent selectivity and high reproducibility. The 2D alpha-MoO3 nano-films fabricated via ALD technique in this work represent a great opportunity for development of high-performance electrochemical sensors based on 2D transition metal oxides.
Published: 2018
Subjects:
Online Access:https://doi.org/10.1016/j.snb.2018.01.243
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667274

MARC

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200 1 |a Atomic layer deposition-developed two-dimensional alpha-MoO3 windows excellent hydrogen peroxide electrochemical sensing capabilities  |f Wei Zihan, Hai Zhenyin, M. K. Akbari [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 59 tit.] 
330 |a Two-dimensional (2D) alpha-MoO3 nano-films with thickness of 4.9 nm were fabricated via atomic layer deposition (ALD) technique for the first time on the wafer scale and were subsequently annealed at 200 °C. The developed MoO3 nano-films were composed of flat nanoparticles with the average size of about 35 nm and possessed layered orthorhombic phase (alpha-MoO3). The electrochemical sensor based on these 2D alpha-MoO3 nano-films exhibited great sensitivity of 168.72 muA mM-1 cm-2 to hydrogen peroxide (H2O2) and presented extremely wide linear detection range of 0.4 muM-57.6 mM with the lowest detection limit of 0.076 muM at the signal to noise ratio of 3. Furthermore, due to extremely thin nature of 2D alpha-MoO3 nano-films ultra-fast response/recovery time of 2.0 s was achieved under the wide linear H2O2 detection range. Additionally, the sensor based on 2D alpha-MoO3 nano-films was also demonstrated great long-term stability, excellent selectivity and high reproducibility. The 2D alpha-MoO3 nano-films fabricated via ALD technique in this work represent a great opportunity for development of high-performance electrochemical sensors based on 2D transition metal oxides. 
461 |t Sensors and Actuators B: Chemical 
463 |t Vol. 262  |v [P. 334-344]  |d 2018 
610 1 |a труды учёных ТПУ 
610 1 |a электронный ресурс 
610 1 |a alpha-MoO3 
610 1 |a atomic layer deposition 
610 1 |a electrochemical sensing 
610 1 |a hydrogen peroxide 
610 1 |a осаждение 
610 1 |a атомные слои 
610 1 |a зондирование 
610 1 |a пероксид водорода 
701 0 |a Wei Zihan 
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701 1 |a Qi  |b D.  |g Dongchen 
701 0 |a Xing Kaijian 
701 0 |a Zhao Qing 
701 1 |a Verpoort  |b F. V. K.  |c Chemical Engineer  |c Professor of Tomsk Polytechnic University, doctor of chemical Sciences  |f 1963-  |g Frensis Valter Kornelius  |3 (RuTPU)RU\TPU\pers\35059  |9 18334 
701 0 |a Hu Jie 
701 0 |a Hyde Lachlan 
701 1 |a Zhuiykov  |b S.  |g Sergey 
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