Effect of Al Addition on the Oxidation Resistance of HfC Thin Films

Bibliographic Details
Parent link:Coatings
Vol. 12, iss. 1.— 2022.— [27, 7 p.]
Corporate Authors: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Other Authors: Gaydaychuk A. V. Alexander Valerievich, Linnik S. A. Stepan Andreevich, Mitulinsky A. S. Aleksandr Sergeevich, Zenkin S. P. Sergey Petrovich
Summary:Title screen
In this paper, we focus on the research of Al addition on Hf–Al–C film structure and oxidation resistance. It was found that obtained Hf–A–C films consist of a solid solution of Al in non-stoichiometric cubic HfC and have identical XRD patterns to bcc–HfC. Besides, the Al addition decreases the sample mass gain during oxidation in air at temperatures up to 800 °C. Mass gain for Hf–Al–C was 44.3 and 22.5% less, compared to pristine HfC, at 600 and 800 °C, respectively.
Published: 2022
Subjects:
Online Access:http://earchive.tpu.ru/handle/11683/70753
https://doi.org/10.3390/coatings12010027
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667194