X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire; ACS Nano; Vol. 11, iss. 7
| Parent link: | ACS Nano Vol. 11, iss. 7.— 2017.— [P. 6605-6611] |
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| 団体著者: | |
| その他の著者: | , , , , , , , , , , , |
| 要約: | Title screen The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core–shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core–shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed. |
| 言語: | 英語 |
| 出版事項: |
2017
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| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1021/acsnano.6b08122 |
| フォーマット: | 電子媒体 図書の章 |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666913 |