Physical Modeling of Dislocation Connection in LEDs under Different External Impacts; Instruments and Experimental Techniques; Vol. 64, iss. 5

Physical Modeling of Dislocation Connection in LEDs under Different External Impacts; Instruments and Experimental Techniques; Vol. 64, iss. 5

書誌詳細
Parent link:	Instruments and Experimental Techniques Vol. 64, iss. 5.— 2021.— [P. 720-728]
団体著者:	Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение экспериментальной физики
その他の著者:	Gradoboev A. V. Aleksandr Vasilyevich, Orlova K. N. Kseniya Nikolaevna, Simonova A. V. Anastasiya Vladimirovna, Sednev V. V. Vyacheslav Vladimirovich
要約:	Title screen A method for physical modeling of the influence of bulk leakage-current channels (dislocations) on the electrophysical and lighting characteristics of LEDs by connecting the p-n junction of an LED in parallel to an ohmic resistance or another p-n junction is described. The relationships that allow one to determine the change in the electrophysical and lighting characteristics of LEDs under the influence of various external factors (ionizing radiation, long-term operation, etc.) have been established. Using the obtained relationships, it is possible to determine the electrophysical characteristics of dislocations according to the changes in the electrophysical and lighting characteristics of LEDs, taking the role of dislocations into account. Based on the literature data, the efficiency of using the established relationships in the analysis of the characteristics of LEDs that are exposed to external impacts has been shown. Режим доступа: по договору с организацией-держателем ресурса
言語:	英語
出版事項:	2021
主題:	электронный ресурс труды учёных ТПУ физическое моделирование светодиоды электрофизические характеристики дислокации внешние воздействия
オンライン･アクセス:	https://doi.org/10.1134/S0020441221040151
フォーマット:	電子媒体図書の章
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666371

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