Physical Modeling of Dislocation Connection in LEDs under Different External Impacts; Instruments and Experimental Techniques; Vol. 64, iss. 5

Physical Modeling of Dislocation Connection in LEDs under Different External Impacts

التفاصيل البيبلوغرافية
Parent link:	Instruments and Experimental Techniques Vol. 64, iss. 5.— 2021.— [P. 720-728]
مؤلف مشترك:	Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение экспериментальной физики
مؤلفون آخرون:	Gradoboev A. V. Aleksandr Vasilyevich, Orlova K. N. Kseniya Nikolaevna, Simonova A. V. Anastasiya Vladimirovna, Sednev V. V. Vyacheslav Vladimirovich
الملخص:	Title screen A method for physical modeling of the influence of bulk leakage-current channels (dislocations) on the electrophysical and lighting characteristics of LEDs by connecting the p-n junction of an LED in parallel to an ohmic resistance or another p-n junction is described. The relationships that allow one to determine the change in the electrophysical and lighting characteristics of LEDs under the influence of various external factors (ionizing radiation, long-term operation, etc.) have been established. Using the obtained relationships, it is possible to determine the electrophysical characteristics of dislocations according to the changes in the electrophysical and lighting characteristics of LEDs, taking the role of dislocations into account. Based on the literature data, the efficiency of using the established relationships in the analysis of the characteristics of LEDs that are exposed to external impacts has been shown. Режим доступа: по договору с организацией-держателем ресурса
اللغة:	الإنجليزية
منشور في:	2021
الموضوعات:	электронный ресурс труды учёных ТПУ физическое моделирование светодиоды электрофизические характеристики дислокации внешние воздействия
الوصول للمادة أونلاين:	https://doi.org/10.1134/S0020441221040151
التنسيق:	الكتروني فصل الكتاب
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666371

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