Physical Modeling of Dislocation Connection in LEDs under Different External Impacts; Instruments and Experimental Techniques; Vol. 64, iss. 5
| Parent link: | Instruments and Experimental Techniques Vol. 64, iss. 5.— 2021.— [P. 720-728] |
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| מחבר תאגידי: | |
| מחברים אחרים: | , , , |
| סיכום: | Title screen A method for physical modeling of the influence of bulk leakage-current channels (dislocations) on the electrophysical and lighting characteristics of LEDs by connecting the p-n junction of an LED in parallel to an ohmic resistance or another p-n junction is described. The relationships that allow one to determine the change in the electrophysical and lighting characteristics of LEDs under the influence of various external factors (ionizing radiation, long-term operation, etc.) have been established. Using the obtained relationships, it is possible to determine the electrophysical characteristics of dislocations according to the changes in the electrophysical and lighting characteristics of LEDs, taking the role of dislocations into account. Based on the literature data, the efficiency of using the established relationships in the analysis of the characteristics of LEDs that are exposed to external impacts has been shown. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2021
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1134/S0020441221040151 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666371 |