High-rate grow of single crystal diamond in AC glow discharge plasma; Diamond and Related Materials; Vol. 120
| Parent link: | Diamond and Related Materials Vol. 120.— 2021.— [108681, 7 p.] |
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| Kurumsal yazarlar: | , , |
| Diğer Yazarlar: | , , , |
| Özet: | Title screen The detailed experimental behavior of an AC abnormal glow discharge plasma assisted chemical vapor deposition reactor for single crystal diamond (SCD) synthesis operating within the wide-range (20–250 Torr) pressure regime was presented. Within the discharge operating window absorbed power densities of 250–9000 W/cm3 were achieved and high quality SCD synthesis with growth rate up to 80 ?m/h was demonstrated. At the power densities over 2500 W/cm3 the diamond substrates were located directly on water-cooled substrate holder without any intermediate molybdenum holder. The influence of several input experimental variables including pressure, N2 and Ar concentration, CH4 percentage, and discharge current on SCD deposition was explored. The quality of synthesized crystals approved competitive purity level of glow discharge CVD process. Режим доступа: по договору с организацией-держателем ресурса |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2021
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| Konular: | |
| Online Erişim: | https://doi.org/10.1016/j.diamond.2021.108681 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666300 |
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| 200 | 1 | |a High-rate grow of single crystal diamond in AC glow discharge plasma |f S. A. Linnik, S. P. Zenkin, A. V. Gaydaychuk, A. S. Mitulinsky | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 48 tit.] | ||
| 330 | |a The detailed experimental behavior of an AC abnormal glow discharge plasma assisted chemical vapor deposition reactor for single crystal diamond (SCD) synthesis operating within the wide-range (20–250 Torr) pressure regime was presented. Within the discharge operating window absorbed power densities of 250–9000 W/cm3 were achieved and high quality SCD synthesis with growth rate up to 80 ?m/h was demonstrated. At the power densities over 2500 W/cm3 the diamond substrates were located directly on water-cooled substrate holder without any intermediate molybdenum holder. The influence of several input experimental variables including pressure, N2 and Ar concentration, CH4 percentage, and discharge current on SCD deposition was explored. The quality of synthesized crystals approved competitive purity level of glow discharge CVD process. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 338 | |b Российский научный фонд |d 19-72-10057 | ||
| 461 | |t Diamond and Related Materials | ||
| 463 | |t Vol. 120 |v [108681, 7 p.] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a single crystal diamond | |
| 610 | 1 | |a high-rate growth | |
| 610 | 1 | |a PACVD | |
| 610 | 1 | |a glow discharge | |
| 610 | 1 | |a монокристаллы | |
| 610 | 1 | |a алмазы | |
| 610 | 1 | |a рост | |
| 610 | 1 | |a тлеющие разряды | |
| 610 | 1 | |a плазма | |
| 701 | 1 | |a Linnik |b S. A. |c physicist |c Engineer-Researcher of Tomsk Polytechnic University |f 1985- |g Stepan Andreevich |3 (RuTPU)RU\TPU\pers\32877 |9 16725 | |
| 701 | 1 | |a Zenkin |b S. P. |c physicist |c Researcher of Tomsk Polytechnic University |f 1988- |g Sergey Petrovich |3 (RuTPU)RU\TPU\pers\41880 | |
| 701 | 1 | |a Gaydaychuk |b A. V. |c physicist |c Postgraduate, Engineer - Researcher of Tomsk Polytechnic University |f 1984- |g Alexander Valerievich |3 (RuTPU)RU\TPU\pers\32876 |9 16724 | |
| 701 | 1 | |a Mitulinsky |b A. S. |g Aleksandr Sergeevich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" |3 (RuTPU)RU\TPU\col\23502 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Отделение материаловедения |3 (RuTPU)RU\TPU\col\23508 |
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