High-rate grow of single crystal diamond in AC glow discharge plasma
| Parent link: | Diamond and Related Materials Vol. 120.— 2021.— [108681, 7 p.] |
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| その他の著者: | , , , |
| 要約: | Title screen The detailed experimental behavior of an AC abnormal glow discharge plasma assisted chemical vapor deposition reactor for single crystal diamond (SCD) synthesis operating within the wide-range (20–250 Torr) pressure regime was presented. Within the discharge operating window absorbed power densities of 250–9000 W/cm3 were achieved and high quality SCD synthesis with growth rate up to 80 ?m/h was demonstrated. At the power densities over 2500 W/cm3 the diamond substrates were located directly on water-cooled substrate holder without any intermediate molybdenum holder. The influence of several input experimental variables including pressure, N2 and Ar concentration, CH4 percentage, and discharge current on SCD deposition was explored. The quality of synthesized crystals approved competitive purity level of glow discharge CVD process. Режим доступа: по договору с организацией-держателем ресурса |
| 言語: | 英語 |
| 出版事項: |
2021
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| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1016/j.diamond.2021.108681 |
| フォーマット: | 電子媒体 図書の章 |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666300 |