High-rate grow of single crystal diamond in AC glow discharge plasma; Diamond and Related Materials; Vol. 120

High-rate grow of single crystal diamond in AC glow discharge plasma; Diamond and Related Materials; Vol. 120

Dades bibliogràfiques
Parent link:Diamond and Related Materials
Vol. 120.— 2021.— [108681, 7 p.]
Autor corporatiu: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий", Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Altres autors: Linnik S. A. Stepan Andreevich, Zenkin S. P. Sergey Petrovich, Gaydaychuk A. V. Alexander Valerievich, Mitulinsky A. S. Aleksandr Sergeevich
Sumari:Title screen
The detailed experimental behavior of an AC abnormal glow discharge plasma assisted chemical vapor deposition reactor for single crystal diamond (SCD) synthesis operating within the wide-range (20–250 Torr) pressure regime was presented. Within the discharge operating window absorbed power densities of 250–9000 W/cm3 were achieved and high quality SCD synthesis with growth rate up to 80 ?m/h was demonstrated. At the power densities over 2500 W/cm3 the diamond substrates were located directly on water-cooled substrate holder without any intermediate molybdenum holder. The influence of several input experimental variables including pressure, N2 and Ar concentration, CH4 percentage, and discharge current on SCD deposition was explored. The quality of synthesized crystals approved competitive purity level of glow discharge CVD process.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2021
Matèries:
электронный ресурс
труды учёных ТПУ
single crystal diamond
high-rate growth
PACVD
glow discharge
монокристаллы
алмазы
рост
тлеющие разряды
плазма
Accés en línia:https://doi.org/10.1016/j.diamond.2021.108681
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666300
Descripció
Sumari:Title screen
The detailed experimental behavior of an AC abnormal glow discharge plasma assisted chemical vapor deposition reactor for single crystal diamond (SCD) synthesis operating within the wide-range (20–250 Torr) pressure regime was presented. Within the discharge operating window absorbed power densities of 250–9000 W/cm3 were achieved and high quality SCD synthesis with growth rate up to 80 ?m/h was demonstrated. At the power densities over 2500 W/cm3 the diamond substrates were located directly on water-cooled substrate holder without any intermediate molybdenum holder. The influence of several input experimental variables including pressure, N2 and Ar concentration, CH4 percentage, and discharge current on SCD deposition was explored. The quality of synthesized crystals approved competitive purity level of glow discharge CVD process.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.diamond.2021.108681

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