Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010

Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010

Dades bibliogràfiques
Parent link:Micro/Nanosystems Technologies, MNST'2010.— 2010.— [P. 37-40]
Altres autors: Anishchenko E. V. Ekaterina, Arykov V. S. Vadim, Gavrilova A. M. Anastasiya, Dedkova O. A. Olga, Kagadei V. A. Valery, Kamchatnaya O. V. Oksana Valerievna, Lilenko Yu. V. Yury, Yushenko A. Yu. Aleksey
Sumari:Title screen
This paper demonstrates the main aspects of thetechnology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayerdielectric “dummy gate” used for fabrication of the metal–semiconductor field effect transistor with 0.5 microns gatelength and ion implantation for channel, drain and sourceregions formation is described. Methods of front- and backside processing and specifications of control MMICs such asL–, S– and X–band switches, attenuators and phase-shiftersare described
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2010
Matèries:
электронный ресурс
труды учёных ТПУ
gallium arsenide
ion implantation
dummy gate
MESFET
AESA
ионная имплантация
Accés en línia:https://doi.org/10.1109/MNST.2010.5687133
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664901

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