Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010

Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication

Bibliographic Details
Parent link:Micro/Nanosystems Technologies, MNST'2010.— 2010.— [P. 37-40]
Other Authors: Anishchenko E. V. Ekaterina, Arykov V. S. Vadim, Gavrilova A. M. Anastasiya, Dedkova O. A. Olga, Kagadei V. A. Valery, Kamchatnaya O. V. Oksana Valerievna, Lilenko Yu. V. Yury, Yushenko A. Yu. Aleksey
Summary:Title screen
This paper demonstrates the main aspects of thetechnology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayerdielectric “dummy gate” used for fabrication of the metal–semiconductor field effect transistor with 0.5 microns gatelength and ion implantation for channel, drain and sourceregions formation is described. Methods of front- and backside processing and specifications of control MMICs such asL–, S– and X–band switches, attenuators and phase-shiftersare described
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2010
Subjects:
электронный ресурс
труды учёных ТПУ
gallium arsenide
ion implantation
dummy gate
MESFET
AESA
ионная имплантация
Online Access:https://doi.org/10.1109/MNST.2010.5687133
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664901

Internet

https://doi.org/10.1109/MNST.2010.5687133

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