Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010
| Parent link: | Micro/Nanosystems Technologies, MNST'2010.— 2010.— [P. 37-40] |
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| Andere auteurs: | , , , , , , , |
| Samenvatting: | Title screen This paper demonstrates the main aspects of thetechnology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayerdielectric “dummy gate” used for fabrication of the metal–semiconductor field effect transistor with 0.5 microns gatelength and ion implantation for channel, drain and sourceregions formation is described. Methods of front- and backside processing and specifications of control MMICs such asL–, S– and X–band switches, attenuators and phase-shiftersare described Режим доступа: по договору с организацией-держателем ресурса |
| Taal: | Engels |
| Gepubliceerd in: |
2010
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| Onderwerpen: | |
| Online toegang: | https://doi.org/10.1109/MNST.2010.5687133 |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664901 |
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| 200 | 1 | |a Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication |f E. V. Anishchenko, V. S. Arykov, A. M. Gavrilova [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 40 (3 tit.)] | ||
| 330 | |a This paper demonstrates the main aspects of thetechnology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayerdielectric “dummy gate” used for fabrication of the metal–semiconductor field effect transistor with 0.5 microns gatelength and ion implantation for channel, drain and sourceregions formation is described. Methods of front- and backside processing and specifications of control MMICs such asL–, S– and X–band switches, attenuators and phase-shiftersare described | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t Micro/Nanosystems Technologies, MNST'2010 |o proceedings of the 2nd Russia School and Seminar on Fundamental Problems, 9-11 December 2010, Novosibirsk, Russia |v [P. 37-40] |d 2010 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a gallium arsenide | |
| 610 | 1 | |a ion implantation | |
| 610 | 1 | |a dummy gate | |
| 610 | 1 | |a MESFET | |
| 610 | 1 | |a AESA | |
| 610 | 1 | |a ионная имплантация | |
| 701 | 1 | |a Anishchenko |b E. V. |g Ekaterina | |
| 701 | 1 | |a Arykov |b V. S. |g Vadim | |
| 701 | 1 | |a Gavrilova |b A. M. |g Anastasiya | |
| 701 | 1 | |a Dedkova |b O. A. |g Olga | |
| 701 | 1 | |a Kagadei |b V. A. |g Valery | |
| 701 | 1 | |a Kamchatnaya |b O. V. |c specialist in the field of material science |c Associate Professor of Tomsk Polytechnic University, Candidate of chemical sciences |f 1984- |g Oksana Valerievna |3 (RuTPU)RU\TPU\pers\46876 |9 22498 | |
| 701 | 1 | |a Lilenko |b Yu. V. |g Yury | |
| 701 | 1 | |a Yushenko |b A. Yu. |g Aleksey | |
| 801 | 2 | |a RU |b 63413507 |c 20210528 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1109/MNST.2010.5687133 | |
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