APA (7th ed.) Citation

Anishchenko E. V. Ekaterina, Arykov V. S. Vadim, Gavrilova A. M. Anastasiya, Dedkova O. A. Olga, Kagadei V. A. Valery, Kamchatnaya O. V. Oksana Valerievna, . . . Yushenko A. Yu. Aleksey. (2010). Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010. 2010. https://doi.org/10.1109/MNST.2010.5687133

Chicago Style (17th ed.) Citation

Anishchenko E. V. Ekaterina, Arykov V. S. Vadim, Gavrilova A. M. Anastasiya, Dedkova O. A. Olga, Kagadei V. A. Valery, Kamchatnaya O. V. Oksana Valerievna, Lilenko Yu. V. Yury, and Yushenko A. Yu. Aleksey. Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010. 2010, 2010. https://doi.org/10.1109/MNST.2010.5687133.

MLA (9th ed.) Citation

Anishchenko E. V. Ekaterina, et al. Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication; Micro/Nanosystems Technologies, MNST'2010. 2010, 2010. https://doi.org/10.1109/MNST.2010.5687133.