Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene; Fullerenes, Nanotubes and Carbon Nanostructures; Vol. 26, iss. 3

Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene; Fullerenes, Nanotubes and Carbon Nanostructures; Vol. 26, iss. 3

Bibliographic Details
Parent link:	Fullerenes, Nanotubes and Carbon Nanostructures Vol. 26, iss. 3.— 2018.— [P. 152-157]
Corporate Author:	Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра высшей математики и математической физики
Other Authors:	Bobenko N. G. Nadezhda Georgievna, Egorushkin V. E. Valery Efimovich, Melnikova N. V. Nataliya Vasiljevna, Belosludtseva A. A. Anna Alekseevna, Barkalov L. D. Leonid Dmitrievich, Ponomarev A. N. Aleksandr Nikolaevich
Summary:	Title screen We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene. Режим доступа: по договору с организацией-держателем ресурса
Language:	English
Published:	2018
Subjects:	электронный ресурс труды учёных ТПУ graphene density of statess hort-range order transport properties structural defects графены плотность состояний транспортные свойства структурные дефекты электронные состояния
Online Access:	https://doi.org/10.1080/1536383X.2017.1420647
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664545

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