Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene

Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene

書誌詳細
Parent link:	Fullerenes, Nanotubes and Carbon Nanostructures Vol. 26, iss. 3.— 2018.— [P. 152-157]
団体著者:	Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра высшей математики и математической физики
その他の著者:	Bobenko N. G. Nadezhda Georgievna, Egorushkin V. E. Valery Efimovich, Melnikova N. V. Nataliya Vasiljevna, Belosludtseva A. A. Anna Alekseevna, Barkalov L. D. Leonid Dmitrievich, Ponomarev A. N. Aleksandr Nikolaevich
要約:	Title screen We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene. Режим доступа: по договору с организацией-держателем ресурса
言語:	英語
出版事項:	2018
主題:	электронный ресурс труды учёных ТПУ graphene density of statess hort-range order transport properties structural defects графены плотность состояний транспортные свойства структурные дефекты электронные состояния
オンライン･アクセス:	https://doi.org/10.1080/1536383X.2017.1420647
フォーマット:	電子媒体図書の章
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664545

インターネット

https://doi.org/10.1080/1536383X.2017.1420647