Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene; Fullerenes, Nanotubes and Carbon Nanostructures; Vol. 26, iss. 3

Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene; Fullerenes, Nanotubes and Carbon Nanostructures; Vol. 26, iss. 3

Dettagli Bibliografici
Parent link:Fullerenes, Nanotubes and Carbon Nanostructures
Vol. 26, iss. 3.— 2018.— [P. 152-157]
Ente Autore: Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра высшей математики и математической физики
Altri autori: Bobenko N. G. Nadezhda Georgievna, Egorushkin V. E. Valery Efimovich, Melnikova N. V. Nataliya Vasiljevna, Belosludtseva A. A. Anna Alekseevna, Barkalov L. D. Leonid Dmitrievich, Ponomarev A. N. Aleksandr Nikolaevich
Riassunto:Title screen
We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene.
Режим доступа: по договору с организацией-держателем ресурса
Lingua:inglese
Pubblicazione: 2018
Soggetti:
электронный ресурс
труды учёных ТПУ
graphene
density of statess
hort-range order
transport properties
structural defects
графены
плотность состояний
транспортные свойства
структурные дефекты
электронные состояния
Accesso online:https://doi.org/10.1080/1536383X.2017.1420647
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664545
Descrizione
Riassunto:Title screen
We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1080/1536383X.2017.1420647

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