Formation and structural features of nitrogen-doped titanium dioxide thin films grown by reactive magnetron sputtering; Applied Surface Science; Vol. 534
| Parent link: | Applied Surface Science Vol. 534.— 2020.— Article number 147572, 10 p. |
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| Rannpháirtithe: | , , , , , |
| Achoimre: | Title screen The structural features of N-doped titanium dioxide (N-TiO2) thin films deposited via reactive magnetron sputtering system with different nitrogen to oxygen ratio are analyzed. Bias voltage was used as a significant parameter involved in the deposition process. Grown films have two-phase structure consisting of anatase and rutile mixture. The analysis of structure and morphology of the films by SEM, TEM, XRD, FTIR and XPS techniques showed the changing of anatase to rutile ratio and grain size reduction in N-TiO2 thin films with increase of nitrogen content in the working gas at simultaneous bias applying. Nitrogen atoms in oxide form are located at the crystallites boundaries and this 2D quasi-layer of NOx species limits the epitaxial growth of TiO2 crystallites during film formation Текстовый файл AM_Agreement |
| Teanga: | Béarla |
| Foilsithe / Cruthaithe: |
2020
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| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1016/j.apsusc.2020.147572 |
| Formáid: | MixedMaterials Leictreonach Caibidil leabhair |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=663060 |
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| 200 | 1 | |a Formation and structural features of nitrogen-doped titanium dioxide thin films grown by reactive magnetron sputtering |f A. A. Pustovalova, E. L. Boytsova, D. Aubakirova [et al.] | |
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| 300 | |a Title screen | ||
| 320 | |a References: 61 tit | ||
| 330 | |a The structural features of N-doped titanium dioxide (N-TiO2) thin films deposited via reactive magnetron sputtering system with different nitrogen to oxygen ratio are analyzed. Bias voltage was used as a significant parameter involved in the deposition process. Grown films have two-phase structure consisting of anatase and rutile mixture. The analysis of structure and morphology of the films by SEM, TEM, XRD, FTIR and XPS techniques showed the changing of anatase to rutile ratio and grain size reduction in N-TiO2 thin films with increase of nitrogen content in the working gas at simultaneous bias applying. Nitrogen atoms in oxide form are located at the crystallites boundaries and this 2D quasi-layer of NOx species limits the epitaxial growth of TiO2 crystallites during film formation | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Applied Surface Science | |
| 463 | 1 | |t Vol. 534 |v Article number 147572, 10 p. |d 2020 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a titanium dioxide | |
| 610 | 1 | |a N-doped TiO2 | |
| 610 | 1 | |a nitrogen oxides | |
| 610 | 1 | |a bias voltage | |
| 610 | 1 | |a magnetron sputtering | |
| 610 | 1 | |a оксид титана | |
| 610 | 1 | |a оксид азота | |
| 610 | 1 | |a магнетронное распыление | |
| 701 | 1 | |a Pustovalova |b A. A. |c biophysicist |c engineer of Tomsk Polytechnic University |f 1989- |g Alla Aleksandrovna |9 17745 | |
| 701 | 1 | |a Boytsova |b E. L. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1975- |g Elena Lvovna |3 (RuTPU)RU\TPU\pers\36962 |9 19981 | |
| 701 | 1 | |a Aubakirova |b D. |g Danagul | |
| 701 | 1 | |a Bruns |b M. P. |g Michael | |
| 701 | 1 | |a Tverdokhlebov |b S. I. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science |f 1961- |g Sergei Ivanovich |3 (RuTPU)RU\TPU\pers\30855 |9 15101 | |
| 701 | 1 | |a Pichugin |b V. F. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c Physicist |f 1944-2021 |g Vladimir Fyodorovich |3 (RuTPU)RU\TPU\pers\30933 |9 15171 | |
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