Generation of boron ion beams by vacuum arc and planar magnetron ion sources; Review of Scientific Instruments; Vol. 90, iss. 10

Bibliografiske detaljer
Parent link:Review of Scientific Instruments
Vol. 90, iss. 10.— 2019.— [103302, 4 p.]
Institution som forfatter: Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Отделение электроэнергетики и электротехники
Andre forfattere: Bugaev A. V. Aleksey Vladimirovich, Frolova V. P. Valeriya Petrovna, Gushenets V. I. Vasily Ivanovich, Nikolaev A. G. Aleksey Gennadjevich, Oks E. M. Efim Mikhaylovich, Savkin K. P. Konstantin Petrovich, Shandrikov M. V. Maksim Valentinovich, Vizir A. Alexey, Yushkov A. Yu. Anatoly Yurievich, Кадлубович Б. Е. Борис Евгеньевич, Yushkov G. Yu. Georgy Yurjevich
Summary:Title screen
Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 2019
Fag:
Online adgang:https://doi.org/10.1063/1.5125704
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662572

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