Generation of boron ion beams by vacuum arc and planar magnetron ion sources

Generation of boron ion beams by vacuum arc and planar magnetron ion sources

Bibliographic Details
Parent link:	Review of Scientific Instruments Vol. 90, iss. 10.— 2019.— [103302, 4 p.]
Corporate Author:	Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Отделение электроэнергетики и электротехники
Other Authors:	Bugaev A. V. Aleksey Vladimirovich, Frolova V. P. Valeriya Petrovna, Gushenets V. I. Vasily Ivanovich, Nikolaev A. G. Aleksey Gennadjevich, Oks E. M. Efim Mikhaylovich, Savkin K. P. Konstantin Petrovich, Shandrikov M. V. Maksim Valentinovich, Vizir A. Alexey, Yushkov A. Yu. Anatoly Yurievich, Кадлубович Б. Е. Борис Евгеньевич, Yushkov G. Yu. Georgy Yurjevich
Summary:	Title screen Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams. Режим доступа: по договору с организацией-держателем ресурса
Language:	English
Published:	2019
Subjects:	электронный ресурс труды учёных ТПУ генерация ионы бора вакуумные дуги планарные технологии
Online Access:	https://doi.org/10.1063/1.5125704
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662572

Internet

https://doi.org/10.1063/1.5125704