Generation of boron ion beams by vacuum arc and planar magnetron ion sources; Review of Scientific Instruments; Vol. 90, iss. 10

Detalhes bibliográficos
Parent link:Review of Scientific Instruments
Vol. 90, iss. 10.— 2019.— [103302, 4 p.]
Autor Corporativo: Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Отделение электроэнергетики и электротехники
Outros Autores: Bugaev A. V. Aleksey Vladimirovich, Frolova V. P. Valeriya Petrovna, Gushenets V. I. Vasily Ivanovich, Nikolaev A. G. Aleksey Gennadjevich, Oks E. M. Efim Mikhaylovich, Savkin K. P. Konstantin Petrovich, Shandrikov M. V. Maksim Valentinovich, Vizir A. Alexey, Yushkov A. Yu. Anatoly Yurievich, Кадлубович Б. Е. Борис Евгеньевич, Yushkov G. Yu. Georgy Yurjevich
Resumo:Title screen
Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:inglês
Publicado em: 2019
Assuntos:
Acesso em linha:https://doi.org/10.1063/1.5125704
Formato: Recurso Electrónico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662572