Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film; Applied Surface Science; Vol. 500

Bibliografiske detaljer
Parent link:	Applied Surface Science Vol. 500.— 2020.— [144048, 10 p.]
Corporate Authors:	Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение экспериментальной физики, Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научно-образовательный центр Б. П. Вейнберга
Andre forfattere:	Sun Zhilei, Pichugin V. F. Vladimir Fyodorovich, Evdokimov K. E. Kirill Evgenievich, Konishchev M. E. Maksim Evgenievich, Syrtanov M. S. Maksim Sergeevich, Kudiyarov V. N. Victor Nikolaevich, Li Ke, Tverdokhlebov S. I. Sergei Ivanovich
Summary:	Title screen Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance. Режим доступа: по договору с организацией-держателем ресурса
Sprog:	engelsk
Udgivet:	2020
Fag:	электронный ресурс труды учёных ТПУ N-doped TiO2 film pulsed DC magnetron sputtering structure evolution band gap narrowing wettability transition легированные пленки импульсное магнетронное распыление постоянный ток
Online adgang:	https://doi.org/10.1016/j.apsusc.2019.144048
Format:	MixedMaterials Electronisk Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661785