Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film
| Parent link: | Applied Surface Science Vol. 500.— 2020.— [144048, 10 p.] |
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| Corporate Authors: | , , |
| Other Authors: | , , , , , , , |
| Summary: | Title screen Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance. Режим доступа: по договору с организацией-держателем ресурса |
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2020
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| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.apsusc.2019.144048 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661785 |