Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film; Applied Surface Science; Vol. 500
| Parent link: | Applied Surface Science Vol. 500.— 2020.— [144048, 10 p.] |
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| Corporate Authors: | , , |
| Andre forfattere: | , , , , , , , |
| Summary: | Title screen Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2020
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| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.apsusc.2019.144048 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661785 |
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| 200 | 1 | |a Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film |f Sun Zhilei, V. F. Pichugin, K. E. Evdokimov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 79 tit.] | ||
| 330 | |a Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Applied Surface Science | ||
| 463 | |t Vol. 500 |v [144048, 10 p.] |d 2020 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a N-doped TiO2 film | |
| 610 | 1 | |a pulsed DC magnetron sputtering | |
| 610 | 1 | |a structure evolution | |
| 610 | 1 | |a band gap narrowing | |
| 610 | 1 | |a wettability transition | |
| 610 | 1 | |a легированные пленки | |
| 610 | 1 | |a импульсное магнетронное распыление | |
| 610 | 1 | |a постоянный ток | |
| 701 | 0 | |a Sun Zhilei |c physicist |c Research Engineer of Tomsk Polytechnic University |f 1992- |3 (RuTPU)RU\TPU\pers\46147 | |
| 701 | 1 | |a Pichugin |b V. F. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c Physicist |f 1944- |g Vladimir Fyodorovich |3 (RuTPU)RU\TPU\pers\30933 | |
| 701 | 1 | |a Evdokimov |b K. E. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1976- |g Kirill Evgenievich |3 (RuTPU)RU\TPU\pers\31791 |9 15902 | |
| 701 | 1 | |a Konishchev |b M. E. |c physicist |c Senior Lecturer of Tomsk Polytechnic University |f 1987- |g Maksim Evgenievich |3 (RuTPU)RU\TPU\pers\34212 |9 17743 | |
| 701 | 1 | |a Syrtanov |b M. S. |c physicist |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1990- |g Maksim Sergeevich |3 (RuTPU)RU\TPU\pers\34764 |9 18114 | |
| 701 | 1 | |a Kudiyarov |b V. N. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1990- |g Victor Nikolaevich |y Tomsk |3 (RuTPU)RU\TPU\pers\30836 |9 15083 | |
| 701 | 0 | |a Li Ke |c physicist |c engineer of Tomsk Polytechnic University |f 1992- |3 (RuTPU)RU\TPU\pers\46144 | |
| 701 | 1 | |a Tverdokhlebov |b S. I. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science |f 1961- |g Sergei Ivanovich |3 (RuTPU)RU\TPU\pers\30855 |9 15101 | |
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