Thermal Stability of TiZrAlN and TiZrSiN Films Formed by Reactive Magnetron Sputtering; Inorganic Materials: Applied Research; Vol. 9, iss. 3
| Parent link: | Inorganic Materials: Applied Research Vol. 9, iss. 3.— 2018.— [P. 418-426] |
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| Körperschaft: | |
| Weitere Verfasser: | , , , , |
| Zusammenfassung: | Title screen Quaternary TiZrAlN and TiZrSiN films with Ti : Zr ratio of ~1 : 1 and different Al (or Si) content were deposited by simultaneous reactive magnetron sputtering of Ti, Zr, and Al (or Si) targets under Ar + N2 plasma discharges. The elemental composition was determined by WDS and RBS methods; the phase composition was studied by X-ray diffraction. It was found that the c-(Ti,Zr,Al)N solid solution of substitution type is the basis of the (Ti,Zr)1-xAl x N (0.06 ≤ x ≤ 0.65) system. For the (Ti,Zr)1-xSi x N system (0.13 ≤ x ≤ 0.41), a dual-phase structure composed of a nanocomposite on the basis of the c-(Ti,Zr)N solid solution and grainboundary amorphous a-SiN y phase is typical. Appearance of the second a-SiN y phase promotes an amorphization of the films. Vacuum annealing of the films investigated at temperatures up to 1000°C does not lead to decomposition of the solid solutions which constitute the films. Both rather high deposition temperature (600°C) and stoichiometric nitrogen content can be the reasons for thermal stability of the films. Annealing-induced Al depletion of c-(Ti,Zr,Al)N solid solution grains is observed in (Ti,Zr)1-xAl x N films caused by the growth of the AlN based wurtzite phase at the grain boundaries. Режим доступа: по договору с организацией-держателем ресурса |
| Sprache: | Englisch |
| Veröffentlicht: |
2018
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| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1134/S2075113318030024 |
| Format: | Elektronisch Buchkapitel |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661424 |
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| 200 | 1 | |a Thermal Stability of TiZrAlN and TiZrSiN Films Formed by Reactive Magnetron Sputtering |f G. Abadias [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 39 tit.] | ||
| 330 | |a Quaternary TiZrAlN and TiZrSiN films with Ti : Zr ratio of ~1 : 1 and different Al (or Si) content were deposited by simultaneous reactive magnetron sputtering of Ti, Zr, and Al (or Si) targets under Ar + N2 plasma discharges. The elemental composition was determined by WDS and RBS methods; the phase composition was studied by X-ray diffraction. It was found that the c-(Ti,Zr,Al)N solid solution of substitution type is the basis of the (Ti,Zr)1-xAl x N (0.06 ≤ x ≤ 0.65) system. For the (Ti,Zr)1-xSi x N system (0.13 ≤ x ≤ 0.41), a dual-phase structure composed of a nanocomposite on the basis of the c-(Ti,Zr)N solid solution and grainboundary amorphous a-SiN y phase is typical. Appearance of the second a-SiN y phase promotes an amorphization of the films. Vacuum annealing of the films investigated at temperatures up to 1000°C does not lead to decomposition of the solid solutions which constitute the films. Both rather high deposition temperature (600°C) and stoichiometric nitrogen content can be the reasons for thermal stability of the films. Annealing-induced Al depletion of c-(Ti,Zr,Al)N solid solution grains is observed in (Ti,Zr)1-xAl x N films caused by the growth of the AlN based wurtzite phase at the grain boundaries. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Inorganic Materials: Applied Research | ||
| 463 | |t Vol. 9, iss. 3 |v [P. 418-426] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a transition metal nitrides | |
| 610 | 1 | |a magnetron sputtering | |
| 610 | 1 | |a TiZrAlN | |
| 610 | 1 | |a TiZrSiN | |
| 610 | 1 | |a phase formation | |
| 610 | 1 | |a thermal stability | |
| 610 | 1 | |a нитриды | |
| 610 | 1 | |a переходные металлы | |
| 610 | 1 | |a магнетронное распыление | |
| 610 | 1 | |a фазообразование | |
| 610 | 1 | |a термоструктурные напряжения | |
| 701 | 1 | |a Abadias |b G. |g Gregory | |
| 701 | 1 | |a Danilyuk |b A. Yu. |g Anastasiya Yurjevna | |
| 701 | 1 | |a Solodukhin |b I. A. |g Igor Anatoljevich | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Zlotsky |b S. V. |g Sergey Vladimirovich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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