Thermal Stability of TiZrAlN and TiZrSiN Films Formed by Reactive Magnetron Sputtering
| Parent link: | Inorganic Materials: Applied Research Vol. 9, iss. 3.— 2018.— [P. 418-426] |
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| Другие авторы: | , , , , |
| Примечания: | Title screen Quaternary TiZrAlN and TiZrSiN films with Ti : Zr ratio of ~1 : 1 and different Al (or Si) content were deposited by simultaneous reactive magnetron sputtering of Ti, Zr, and Al (or Si) targets under Ar + N2 plasma discharges. The elemental composition was determined by WDS and RBS methods; the phase composition was studied by X-ray diffraction. It was found that the c-(Ti,Zr,Al)N solid solution of substitution type is the basis of the (Ti,Zr)1-xAl x N (0.06 ≤ x ≤ 0.65) system. For the (Ti,Zr)1-xSi x N system (0.13 ≤ x ≤ 0.41), a dual-phase structure composed of a nanocomposite on the basis of the c-(Ti,Zr)N solid solution and grainboundary amorphous a-SiN y phase is typical. Appearance of the second a-SiN y phase promotes an amorphization of the films. Vacuum annealing of the films investigated at temperatures up to 1000°C does not lead to decomposition of the solid solutions which constitute the films. Both rather high deposition temperature (600°C) and stoichiometric nitrogen content can be the reasons for thermal stability of the films. Annealing-induced Al depletion of c-(Ti,Zr,Al)N solid solution grains is observed in (Ti,Zr)1-xAl x N films caused by the growth of the AlN based wurtzite phase at the grain boundaries. Режим доступа: по договору с организацией-держателем ресурса |
| Язык: | английский |
| Опубликовано: |
2018
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| Предметы: | |
| Online-ссылка: | https://doi.org/10.1134/S2075113318030024 |
| Формат: | Электронный ресурс Статья |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661424 |