Destruction of LED heterostructures under high-current electron beam irradiation; IOP Conference Series: Materials Science and Engineering; Vol. 511 : Perspective Materials of Constructional and Medical Purpose

Bibliographic Details
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 511 : Perspective Materials of Constructional and Medical Purpose.— 2019.— [012004, 5 p.]
Main Author: Zixuan Li
Corporate Author: National Research Tomsk Polytechnic University (TPU)
Other Authors: Jiyao Xian, Sysoyeva S. G.
Summary:Title screen
This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.
Language:English
Published: 2019
Subjects:
Online Access:http://dx.doi.org/10.1088/1757-899X/511/1/012004
http://earchive.tpu.ru/handle/11683/55437
Format: MixedMaterials Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660530

MARC

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