Destruction of LED heterostructures under high-current electron beam irradiation; IOP Conference Series: Materials Science and Engineering; Vol. 511 : Perspective Materials of Constructional and Medical Purpose
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 511 : Perspective Materials of Constructional and Medical Purpose.— 2019.— [012004, 5 p.] |
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| প্রধান লেখক: | |
| সংস্থা লেখক: | |
| অন্যান্য লেখক: | , |
| সংক্ষিপ্ত: | Title screen This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space. |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2019
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1088/1757-899X/511/1/012004 http://earchive.tpu.ru/handle/11683/55437 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660530 |