Destruction of LED heterostructures under high-current electron beam irradiation

Библиографические подробности
Источник:	IOP Conference Series: Materials Science and Engineering Vol. 511 : Perspective Materials of Constructional and Medical Purpose.— 2019.— [012004, 5 p.]
Главный автор:	Zixuan Li
Автор-организация:	National Research Tomsk Polytechnic University (TPU)
Другие авторы:	Jiyao Xian, Sysoyeva S. G.
Примечания:	Title screen This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.
Язык:	английский
Опубликовано:	2019
Предметы:	электронный ресурс труды учёных ТПУ светодиодные гетероструктуры облучение электронные пучки эпитаксильные слои сапфировые подложки
Online-ссылка:	http://dx.doi.org/10.1088/1757-899X/511/1/012004 http://earchive.tpu.ru/handle/11683/55437
Формат:	Электронный ресурс Статья
Запись в KOHA:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660530

Описание
Примечания:	Title screen This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.
DOI:	10.1088/1757-899X/511/1/012004

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