Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films; Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology; Vol. 173, iss. 11-12
| Parent link: | Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology Vol. 173, iss. 11-12.— 2018.— [P. 1075-1082] |
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| Corporate Authors: | , |
| מחברים אחרים: | , , , , , , , , , |
| סיכום: | Title screen The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2018
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1080/10420150.2018.1539732 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659742 |
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| 200 | 1 | |a Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films |f G. E. Remnev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 17 tit.] | ||
| 330 | |a The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology | ||
| 463 | |t Vol. 173, iss. 11-12 |v [P. 1075-1082] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a radiation defect | |
| 610 | 1 | |a absorption | |
| 610 | 1 | |a nanocomposite film | |
| 610 | 1 | |a localized states | |
| 610 | 1 | |a pulsed ion implantation | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a поглощения | |
| 610 | 1 | |a нанокомпозитные материалы | |
| 610 | 1 | |a локализованные состояния | |
| 610 | 1 | |a ионная имплантация | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 701 | 1 | |a Musil |b J. |g Jindrrich | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |3 (RuTPU)RU\TPU\pers\41878 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Egorov |b I. S. |c physicist |c Researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1985- |g Ivan Sergeevich |y Tomsk |3 (RuTPU)RU\TPU\pers\32792 |9 16650 | |
| 701 | 1 | |a Gadirov |b R. M. |g Ruslan Mukhamedzhanovich | |
| 701 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Javdosnak |b D. |g Daniel | |
| 701 | 1 | |a Zenkin |b S. P. |c physicist |c Researcher of Tomsk Polytechnic University |f 1988- |g Sergey Petrovich |3 (RuTPU)RU\TPU\pers\41880 | |
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