Structure, Mechanical and Optical Properties of Silicon-Rich Al–Si–N Films Prepared by High Power Impulse Magnetron Sputtering; Coatings; Vol. 9, iss. 1
| Parent link: | Coatings Vol. 9, iss. 1.— 2019.— [53, 6 p.] |
|---|---|
| Erakunde egilea: | |
| Beste egile batzuk: | , , , , |
| Gaia: | Title screen This article reports on the influence of the sputtering parameters (discharge voltage, average target power density) of a high power impulse magnetron discharge (HiPIMS) on the structure, mechanical and optical properties of silicon-rich Al–Si–N films. We show that with the change of a discharge target power density in the range of 30–120 W/cm2, the hardness of the sputtered Al–Si–N films nonlinearly changes in the range of 22–29 GPa, while the concentration of the absorption centers changes in the range of 1018–1020/cm3. The optical spectra of the HiPIMS sputtered films are completely different from the Al–Si–N films prepared by a direct current magnetron sputtering, with an absence of “monoenergetic” optical absorption centers, which are attributed to point defects. |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2019
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| Gaiak: | |
| Sarrera elektronikoa: | http://dx.doi.org/10.3390/coatings9010053 |
| Formatua: | MixedMaterials Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659302 |
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| 200 | 1 | |a Structure, Mechanical and Optical Properties of Silicon-Rich Al–Si–N Films Prepared by High Power Impulse Magnetron Sputtering |f S. P. Zenkin [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 21 tit.] | ||
| 330 | |a This article reports on the influence of the sputtering parameters (discharge voltage, average target power density) of a high power impulse magnetron discharge (HiPIMS) on the structure, mechanical and optical properties of silicon-rich Al–Si–N films. We show that with the change of a discharge target power density in the range of 30–120 W/cm2, the hardness of the sputtered Al–Si–N films nonlinearly changes in the range of 22–29 GPa, while the concentration of the absorption centers changes in the range of 1018–1020/cm3. The optical spectra of the HiPIMS sputtered films are completely different from the Al–Si–N films prepared by a direct current magnetron sputtering, with an absence of “monoenergetic” optical absorption centers, which are attributed to point defects. | ||
| 461 | |t Coatings | ||
| 463 | |t Vol. 9, iss. 1 |v [53, 6 p.] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a HiPIMS | |
| 610 | 1 | |a Al–Si–N | |
| 610 | 1 | |a silicon nitride | |
| 610 | 1 | |a microstructure | |
| 610 | 1 | |a нитрид кремния | |
| 610 | 1 | |a микроструктура | |
| 701 | 1 | |a Zenkin |b S. P. |c physicist |c Researcher of Tomsk Polytechnic University |f 1988- |g Sergey Petrovich |3 (RuTPU)RU\TPU\pers\41880 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Lauk |b A. L. |c Physicist |c Leading engineer of Tomsk Polytechnic University |f 1957- |g Aleksandr Lukyanovich |3 (RuTPU)RU\TPU\pers\37675 | |
| 701 | 1 | |a Zelentsov |b D. Yu. |g Denis Yurjevich | |
| 701 | 1 | |a Demchenko |b S. G. |g Stanislav Gennadjevich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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| 856 | 4 | |u http://dx.doi.org/10.3390/coatings9010053 | |
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